Samsung's newly launched UFS 4.0 flash memory, as its latest generation product, has any performance improvements during the upgrade process? Many users don't understand this. Here is a detailed analysis for you.
Answer: Using advanced UFS 4.0 (Universal Flash Storage Technology) memory chip.
1. In terms of performance, UFS 4.0 has increased the bandwidth speed per channel to 23.2Gbps, which is nearly twice as high as UFS 3.1.
2. Using Samsung’s latest seventh-generation V-NAND flash memory and a self-developed main control, test results show that the sustained read rate is as high as 4200MB/s, and the sustained write rate is also 2800MB/s.
3. It is worth noting that the current industry’s most powerful Samsung 512GB UFS 3.1 flash memory chip (launched in March 2020) has a nominal sustained read rate of 2100MB/s and a write rate of 1200MB/s. Calculated in this way, the writing rate of UFS 4.0 is increased by about 1.3 times.
3. Surprisingly, although the speed has been greatly improved, the power consumption has been reduced. According to Samsung, each milliamp of current can support a read rate of 6MB/s, which is 46% higher than the previous generation product, which will help extend the battery life of the device.
4. In addition, the package size of UFS 4.0 flash memory chip is only 11x13x1mm, and the maximum capacity can reach 1TB.
